| PART |
Description |
Maker |
| HTDR-3 |
300 NANOSECOND AT HIGH TEMPERATURE- FAST RECOVERY HIGH VOLTAGE RECTIFIER DIODES
|
Electronic devices inc.
|
| C330C102JHR5TA C330C102JHR5TA-17 |
Ceramic, Commercial Grade, GoldMax, 1000 pF, 5%, 3,000 V, X7R, Lead Spacing = 5.08mm
|
Kemet Corporation
|
| 03P4MG 03P6MG |
(03P4MG / 03P6MG) 300 mA HIGH-WITHSTANDING-VOLTAGE MOLD SCR
|
NEC
|
| FMMTA92 FMMTA93 FMMTA92TA FMMTA92R |
200 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
PNP High Voltage Transistor
|
ZETEX PLC
Diodes Incorporated
ZETEX[Zetex Semiconductors]
|
| MMBTA42LT1 MMBTA42LT1G MMBTA43LT1 MMBTA43LT3 MMBTA |
High Voltage Transistors(NPN Silicon) 50 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Small Signal High Voltage
|
ONSEMI[ON Semiconductor]
|
| CDEP10506 CDEP105NP-0R8M CDEP105NP-0R3N CDEP105NP- |
POWER INDUCTORS 功率电感
Ceramic Conformally Coated/Radial High Voltage “Gold Max"; Capacitance: 1pF; Voltage: 1000V; Tolerance: ±20%; TC: C0G; Body Size: .370" (9.40) x .300" (7.62) x .250" (6.35); Lead Style: .275" (6.98)
|
Sumida, Corp.
SUMIDA CORPORATION.
|
| 20KPA256A 20KPA256CA 20KPA44CA 20KPA192A 20KPA192C |
CLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPRESSOR STAND-OFF VOLTAGE-20 TO 300 Volts
|
StarHope
|
| NTE2412 |
100 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)
|
NTE[NTE Electronics]
NTE Electronics, Inc.
|
| BF820W |
Low current (max. 50 mA) High voltage (max. 300 V).Collector current IC 50 mA
|
TY Semiconductor Co., Ltd
|
| APT8030 APT8030B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 27A 0.300 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT8030JVR |
POWER MOS V 800V 25A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
